Ultrathin Photoelectric Sensor with Built-in Amplifier

Features

  • Easy installation with M3-mounting Sensors.
  • Long-distance (1 m) Sensors.
  • Ultracompact, Ultrathin Photoelectric Sensor
Ordering Information
Output Circuits
Dimensions
Ratings and Specification
Type T2A-T1N11 T2A-T1N21 T2A-T30N11 T2A-T30N21
Sensing distance 1m 300mm
Standard sensing object Opaque:2mm min.
Minimum detectable object Opaque materals: 2mm(reference value)
Differential travel -
Directional angle Receiver: 3~15° Emitter: 3~15°
Light source(wavelength) Infrared LED(650nm)
Voltage 12~24V DC pulse(P-P)±10% max.
Current consumption Emitter:10mA Receiver:20mA
Protection circuits Power supply and control output reverse polarity protection,Output short-circuit protection
Response time 1.0ms max.
Control output Load power supply voltage: 26.4V DC max.; 
Load current: 50mA max. (Load current with a residual voltage: 2V max.)
Ambient  illumination Sunlight: 10,000lx max.; Incandescent lamp: 5,000lx max.
Ambient temperature Operating: -25~+55℃, Storage: -40~+70℃(with no icing or condensation)
Ambient humidity Operating: 35~85%RH, Storage: 35~95%RH(with  no  condensation)
Insulation resistance 20MΩ min.(DC500V)
Dielectric strength AC1,000V  50/60Hz 1min
Vibration resistance Destruction 10~2,000Hz double amplitude for 0.5 hours each in X,Y and Z directions
Shock resistance Destruction 1000m/s2 3 times each X,Y and Z directions
Degree of protection IEC-IP67
Material Case PBT
Sensing surface Modified polyarylate
Accessories M2x14 Nuts, Spring  gasket, Flat gasket